80812 tkim/42004ea tsim ta-100671 no.7643-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 mch6534 bipolar transistor 15v, 0.7a, low v ce ( sat ) npn single mcph6 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applicaitons ? low-frequency power ampli er, high-speed switching motor drivers, muting features ? composite type with 2 npn transistors contained in a single package, facilitating high-density mounting ? ultrasmall package permitting applied sets to be small and slim ? small on-resistance (ron) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 15 v emitter-to-base voltage v ebo 5v collector current i c 700 ma collector current (pulse) i cp 1.4 a collector dissipation p c when mounted on ceramic substrate (600mm 2 0.8mm) 0.5 w total power dissipation p t when mounted on ceramic substrate (600mm 2 0.8mm) 0.55 w junction temperature tj 150 c storage temperature tstg -55 to +150 c package dimensions unit : mm (typ) 7022a-011 ordering number : EN7643A product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection eg lot no. lot no. tl 1 : emitter1 2 : base1 3 : collector2 4 : emitter2 5 : base2 6 : collector1 mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 5 6 1 4 23 mch6534-tl-e
mch6534 no.7643-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =15v, i e =0a 100 na emitter cutoff current i ebo v eb =4v, i c =0a 100 na dc current gain h fe v ce =2v, i c =10ma 300 800 gain-bandwidth product f t v ce =2v, i c =50ma 330 mhz output capacitance cob v cb =10v, f=1mhz 3.2 pf collector-to-emitter saturation voltage v ce (sat) i c =200ma, i b =10ma 150 300 mv base-to-emitter saturation voltage v be (sat) i c =200ma, i b =10ma 0.9 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 20 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 15 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 5 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg 77 ns fall time t f 40 ns switching time test circuit ordering information device package shipping memo mch6534-tl-e mcph6 3,000pcs./reel pb free v r r b v cc =5v v be = --5v ++ 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =500ma 100 200 300 400 600 500 700 800 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 0.4 0.8 1.2 1.6 0.2 0.6 1.0 1.4 1.8 2.0 it05490 it05491 0 40 80 120 160 200 20 60 100 140 180 i b =0 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 1.0ma 0.9ma v ce =2v ta=75 c 25 c --25 c i c -- v ce i c -- v be collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma
mch6534 no.7643-3/6 1.0 23 57 10 23 57 100 23 57 1000 5 7 100 2 3 5 7 it05496 v ce =2v 1.0 23 57 10 23 57 100 23 57 1000 100 2 3 5 7 1000 2 3 5 7 10000 it05495 ta= --25 c 75 c 25 c i c / i b =20 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- mv 1.0 23 57 10 23 57 100 23 57 1000 10 2 3 5 7 100 2 3 5 7 1000 it05494 i c / i b =50 ta=75 c --25 c 25 c 0.1 23 57 1.0 23 57 10 23 1.0 2 3 5 7 10 it05497 f=1mhz cob -- v cb v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma output capacitance, cob -- pf collector-to-base voltage, v cb -- v f=1mhz 0.1 0.1 it06067 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 1.0 10 out in 1k 1k i b ron -- i b base current, i b -- ma on-resistance, ron -- 0 0 ambient temperature, ta -- c p c -- ta collector dissipation, p c -- w it06387 0.7 0.6 0.5 0.55 0.4 0.3 0.2 0.1 40 20 100 120 60 80 140 160 total dissipation 1unit mounted on a ceramic board (600mm 2 ? 0.8mm) 1.0 23 57 10 23 57 100 23 57 1000 10 2 3 5 7 100 2 3 5 7 1000 3 5 7 100 2 3 5 7 1000 1.0 23 57 10 23 57 100 23 57 1000 it05492 it05493 v ce =2v i c / i b =20 ta=75 c --25 c 25 c ta=75 c --25 c 25 c h fe -- i c v ce (sat) -- i c collector current, i c -- ma dc current gain, h fe collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv
mch6534 no.7643-4/6 embossed taping speci cation mch6534-tl-e
mch6534 no.7643-5/6 outline drawing land pattern example mch6534-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
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